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Sunday, August 9, 2020 | History

2 edition of Chemically deposited thick ferrite films for device application. 1976. found in the catalog.

Chemically deposited thick ferrite films for device application. 1976.

David John Street

Chemically deposited thick ferrite films for device application. 1976.

by David John Street

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Published .
Written in English


Edition Notes

Thesis submitted to the C.N.A.A. forthe degree of Doctor of Philosophy.

ID Numbers
Open LibraryOL19964505M

Thin ferrite films deposited by PLD on silicon substrate Article (PDF Available) in Journal of Optoelectronics and Advanced Materials 9(4) . Ni Zn Fe O 4 thin films were deposited by a spin spray process on a mm thick silicon wafer. with fabricated first layer and PI 1L oxidation solution containing 2 mM NaNO 2 and mM CH3COONa with a pH value of and 1L precursor solution mixed of NiCl 2, ZnCl 2, FeCl 2 with a pH value of were sprayed at 95 o C.

Thus, the carrier mobility in the monolayer device decreases from to 40 cm 2 V-1 s-1, while in the 30 nm-thick multilayer device, it increases from to cm 2 V-1 s process. In this work, a high rate deposition process for zinc ferrite thin films was established. A deposition rate of mm/min was determined by the surface profiler. The deposited films have a plate-like morphology with fibrous texture. Zinc was uniformly incorporated into the ferrite film confirmed by the local.

  The AFM images also demonstrate that IAI films have a very smooth surface which is beneficial for further device application. It is noteworthy that if the thickness of Ag interlayer is less than 5 nm, Ag island-like particles instead of a continuous film will be deposited on the ITO film, leading to the degradation of electric conductance. Half-metallic ferrimagnetic materials such as Fe3O4 are of interest for use in spintronic devices. These devices exploit both the spin and charge of an electron in spin-dependent charge transport. Epitaxial thin films of Fe3O4 have been grown on the three low-index planes of gold by electrodeposition. On Au(), a [] Fe3O4 orientation that is aligned with the underlying .


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Chemically deposited thick ferrite films for device application. 1976 by David John Street Download PDF EPUB FB2

RBS spectra of (a) 40 nm-thick co-deposited nickel ferrite film, and (b) 30 nm-thick cyclic-deposited nickel ferrite film. RBS analysis was done by SIMNRA program (program for the simulation of backscattering spectra for ion beam analysis).

Deposition conditions: T reactor = °C, P reactor = 17 by: 8. A wide range of thin ferrite films has been prepared by a chemical‐deposition process. Alcoholic solutions of ferric nitrate and other metal nitrates were combined in necessary proportions to yield stoichiometric ratios of the desired ferrites, which were then deposited on substrates.

Firing the coated substrates between –°C in a controlled atmosphere resulted in spinel or garnet Cited by: The application process is called plasma-enhanced chemical vapor deposition.

Amcor Limited's technology for SiOx is called Ceramis ®. It is deposited in equipment like that used for metalizing except an electron beam is aimed at an SiOx target and the silicon oxide material evaporates and is deposited onto the film. The coating is optically clear. The Ba–ferrite thin films prepared by sputtering have been found suitable for high density magnetic disk media application for the properties such as their high mechanical hardness and chemical.

Abstract: Co-ferrite thin film with spinel structure is attractive for spintronics and multifunctional devices. So far, single-crystal substrates are necessary to introduce perpendicular magnetic anisotropy in co-ferrite films. In this paper, a unique process has been developed to deposit co-ferrite thin films onto thermally oxidized silicon wafer with perpendicular magnetic Author: Xiaoxi Liu, Sagar Shirasath, Kensuke Shindoh.

Microwave devices using thin films deposited on single-crystal substrates are generally configured in planar geometries following well-known microwave device practices such as microstrip, coplanar waveguide, and stripline.

The development of nucleation-induced coercivity has even permitted the elimination of the bias magnet in thick-film. Introduction. Chemical solution deposition (CSD) represents an interesting alternative fabrication technique for functional inorganic oxide thin films [], such as the ferroelectric binary oxide derivatives discussed in the present book or more general inorganic chalcogenide oxide thin ily CSD typifies an umbrella term comprising a number of chemically.

In CIGS solar cell devices, ALD has been used to deposit conformal thin films of Zn 1−x Sn x O y buffer layers. By tailoring the composition and thickness of the Zn 1−x Sn x O y films via ALD, the device efficiency could be maximized at 18% for an approximate value of x = For SOFCs, ALD has been utilized in Pt catalyst deposition.

Here, the chemical oxygen surface exchange coefficient and film stress of porous La Sr FeO 3-δ (LSF64) thick films were simultaneously measured in situ between –°C and –°C, respectively, using a bilayer curvature measurement technique.

The magnitude and activation energy of the porous LSF64 thick film oxygen surface exchange. In particular, the ferrite film with x = has a large μ' of 15 and a much higher f r of GHz. The reason why the ferrite films have a high f r can be explained by making use of the bianisotropy model.

We could adjust the resonance frequency f r of the ferrite films by changing the composition to satisfy the practical application. The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe2O4/Pt structure, such as low operating voltage, high device yield, long retention time (up to s), and good endurance (up to × cycles).

The dominant conduction mechanisms are Ohmic. The films were deposited by rf sputtering from a single target. The as‐deposited films are amorphous and therefore require careful annealing in oxygen atmosphere.

The sputtered films are a few micrometers thick on 4 in. substrates. The optimum annealing temperature was found by trying to obtain the highest possible magnetization for each ferrite.

The applications of ferrimagnetic oxides, or ferrites, in the last 10 years are reviewed, including thin films and nanoparticles. The general features of the three basic crystal systems and their. A Li-CuFe 2 O 4 thin film has a well-defined nanocrystalline structure with a crystallite size of ∼17 nm.

The TEM and SEM images of the Li-CuFe 2 O 4 thin film show a polyhedron shape of nanoparticles with uneven sizes, resulting in a significant change in its gas sensing characteristics such as sensitivity and sensor response. An optical analysis shows that the Li-CuFe 2 O 4 thin film.

By investigating the thin sample geometry (ferrite slabs 5 to 20 mils thick), we had the opportunity to use commercially available materials to prove the theory and at the same time extend it to a device configuration which is topologically close to the thin film.

Phase‐shifting elements composed of a meander line circuit deposited on a thin ferrite slab have been built. Ferrites have emerged out as excellent material for a broad spectrum of applications.

Thick films of these materials have great demand for energy and advanced electronics. This review highlights a brief overview of the spinel-type of ferrite thick films (S-FTFs) development right from their historical developments, preparation strategies and state of.

A process for forming a ferrite film, which is characterized in that in an aqueous solution containing at least ferrous ions as metal ions, ferrous hydroxide ions FeOH +, or FeOH + and other metal hydroxide ions, are uniformly adsorbed on the surface of a solid by an interfacial reaction at an interfacial boundary between the solid and the aqueous solution; and the.

TECHNOLOGY AREA(S): Materials/Processes. OBJECTIVE: The goal of the research is to develop a low-temperature spin spray deposition of low-loss, high quality nanocrystalline ferrite films and thick ferrite/insulator layers for non-reciprocal and tunable RF device circuits integrated on large scale printed circuit board (PCB) panels.

To do this, we need to prepare specific magnetic cantilevers, that is, we sputter a ferrite film on the micromachined silicon cantilevers as the magnetic active coating, see e.g. Kirsch et al. the films doesn’t vary noticeably with the thermal treatment. a) c=0 M b) c=M b) c=M Fig.

5 Top-down SEM micrographs of zinc ferrite films deposited onto a Corning glass substrate from starting solutions with different Zn2+ concentrations Zinc ferrite films were characterized by using standard zero-field-cooling (ZFC) and field-cooling (FC).

Y3Fe5O12 and YLaFe5 − xAlxO12 (x =,and ) nanoferrites have been prepared by the sol-gel auto combustion route followed by sintering at ° C for 3 h. Thick ferrite films are promising for various applications, including miniaturized energy harvesters, inductor‐on‐chip applications, microelectromechanical systems (MEMS), and microwave devices.

Here, a wet‐chemical (thermal decomposition method) for high‐quality and epitaxial thick ferrite is successfully developed.This chapter starts from a generalized permeability and aims at providing a better understanding of the ferrites behavior in the microwave fields.

The formula of the generalized permeability explains why the permeability of the ferrimagnetic or even the ferromagnetic materials strongly depends on the applied magnetic bias and the polarization of the wave.

Right-hand circularly .